BREAkuP

NEW POWER COMPONENTS BASED ON ALUMINIUM NITRIDE (ALN)

This project sets out to develop a new type of power electronics using aluminium nitride (AlN) in the form of robust wide band-gap semiconductors enabling the use of high operating temperatures. A simple technology based on an ultimate AlN-GaN-AlN heterostructure will be used to generate smaller leakage currents and higher breakdown voltages with improved efficiency thanks to better thermal conductivity.

Low-carbon energy production

- Islands and remote areas - Urban and metropolitan areas - Rural and mountain areas

Correspondant

UMR 8520 - IEMN (Institut d'Electronique, de Microélectronique, et de Nanotechnologie) (59)

Date

March 2018

Category

Funded projects