NEW ALGAN CHANNEL TRANSISTOR FOR HIGH-VOLTAGE APPLICATIONS
The purpose of the ACTION project is to study and develop a new class of ultra-wide bandgap AlGaN channel-based transistors. These AlGaN transistors will be the stepping stone for a future generation of power components providing higher voltage thresholds and greater stability at temperatures exceeding GaN-based transistor limits, thereby becoming competitive alternatives in SiC applications.
Thanks to their improved efficiency at voltage thresholds exceeding 1200 V, which is currently unattainable for GaN-on-silicon transistors, these components will reduce losses that occur during the multiple electrical energy transformations from production through to daily use.
