NEW POWER COMPONENTS BASED ON ALUMINIUM NITRIDE (ALN)
This project sets out to develop a new type of power electronics using aluminium nitride (AlN) in the form of robust wide band-gap semiconductors enabling the use of high operating temperatures. A simple technology based on an ultimate AlN-GaN-AlN heterostructure will be used to generate smaller leakage currents and higher breakdown voltages with improved efficiency thanks to better thermal conductivity.