ESELECTIVE-AREA EPITAXY FOR VERTICAL GALLIUM NITRIDE TRANSISTORS
The ELEGANT project is developing vertical gallium nitride (GaN) on silicon power components to improve the energy efficiency of high-voltage power converters for specific applications in the electric traction and renewable energy sectors.
To reduce power conversion losses, the local growth of the epitaxial layer of GaN (instead of lateral growth) is developed to limit thermoelastic stress. This new type of component is also cheaper to manufacture because it is made on silicon.
