The aim of the project is to develop a new family of power electronic components using aluminium nitride (AlN), a robust wide bandgap semiconductor allowing high operating temperatures. A simple technology based on an ultimate heterostructure (AlN/GaN/AlN) will be used to produce lower leakage currents and higher breakdown voltages with enhanced efficiency thanks to improved thermal conductivity.
Our company has been informed that automated telephone calls are being made by third parties using our brand name improperly.
Please note that these calls are not issued, sponsored or authorised by Capenergies. We are therefore not the source of these calls and accept no responsibility for them.
This constitutes fraudulent use of our name without our consent.
We invite those concerned not to communicate any personal information and to report unwanted calls to the relevant platforms.
We thank those concerned for their understanding.