NEW EPITAXIAL APPROACH FOR HIGHER-PERFORMANCE, MORE ROBUST GAN POWER COMPONENTS ON SILICON
The project aims to develop new epitaxial structures (layer-by-layer crystal growth process) based on Gallium Nitride (GaN) on a Silicon substrate to demonstrate the feasibility of a power transistor capable of withstanding voltages in excess of 1200 V.
The aim of the project is to improve performance (for example, by reducing the recharging time of electric vehicles) and reduce the cost of power electronic components.