ACTION

  • INSTITUTE OF ELECTRONICS, MICROELECTRONICS AND NANOTECHNOLOGY (59)
  • Decarbonising industry, Project financed

NEW ALGAN CHANNEL TRANSISTOR FOR HIGH VOLTAGE APPLICATIONS

The ACTION project aims to explore and develop a new class of transistors using an ultra-wide bandgap AlGaN channel.
These AlGaN transistors should lay the foundations for a future generation of power components, offering higher voltage withstand and temperature stability than GaN-based transistors, thereby competing with SiC applications.
Thanks to increased efficiency in voltage ranges above 1200V, which are currently inaccessible to GaN-on-Silicon transistors, these components will help to reduce the losses that occur during the many transformations of electrical energy from its production to our everyday use.

 

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