The ASGEIR research project aims to develop a compliant silicon-based substrate to facilitate the crystal growth of nitride materials (GaN and its alloys). Controlling yields and costs will have an impact on the industrial production of power transistors and light-emitting diodes for lighting.
Important information - Misuse of our company name
Our company has been informed that automated telephone calls are being made by third parties using our brand name improperly.
Please note that these calls are not issued, sponsored or authorised by Capenergies. We are therefore not the source of these calls and accept no responsibility for them.
This constitutes fraudulent use of our name without our consent.
We invite those concerned not to communicate any personal information and to report unwanted calls to the relevant platforms.
We thank those concerned for their understanding.