ELEGANT

  • ELECTRONICS AND INFORMATION TECHNOLOGY LABORATORY (CEA LETI)
  • Decarbonising industry, Project financed

LOCALISED EPITAXY FOR VERTICAL GALLIUM NITRIDE (GAN) TRANSISTORS

The aim of the ÉLÉGANT project is to develop vertical power components in GaN (Gallium Nitride) on Silicon to improve the energy efficiency of high-voltage power converters, particularly for electric traction and renewable energies.
To reduce conversion losses, this involves developing localised GaN epitaxy processes (instead of the usual planar growth) to limit thermoelastic stresses. And because it is manufactured on silicon, this new type of component is also less expensive.

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